Advanced ICP-RIE Etching Machine Dashboard

HMI/SCADA: Gas Panel β€’ MFC β€’ RF Generator β€’ Matching Network β€’ ESC β€’ Vacuum β€’ MES/PROMIS

Machine Status READY
πŸ‘¨β€πŸ”§
Operator Login AUTO / ENGINEER
πŸ“‹
Recipe Oxide_Etch_v2.3
πŸ“¦
Lot ID L240701-001
πŸ”’
Wafer ID 17 / 25
⏱
Process Timer 00:00:00
SECS/GEM COMMUNICATING
PLC / EC RUN
DATABASE CONNECTED
MES / PROMIS ONLINE
CPU18%
MEM42%
NET12 Mbps
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Gas Panel / MFC

Mass Flow Controller & Process Gas Monitoring

GAS READY
Total Flow 0 sccm
Active Gas 0

Operation Control

Tool sequence command panel

Active Recipe Oxide Etch
v2.3
CFβ‚„40 sccm
CHF₃20 sccm
Ar80 sccm
Oβ‚‚0 sccm
Clβ‚‚0 sccm
BCl₃0 sccm
HBr0 sccm
Pressure30 mTorr
ICP RF1200 W
Bias RF250 W
Chuck Temp20 Β°C
Time45 sec
Process Gas Line
He Backside Cooling
Exhaust to Abatement
PT-101
Gas
PT-102
Chamber
TT-100
Chuck
PS-101
Door
PG-201
Vac
● ● ● ● ● ● ● ● ●
ESC-101 Electrostatic Chuck
RF Generator ICP
13.56 MHz
Forward: 0 W
Status: OFF
MN-ICP Matching
C1: 0% C2: 0%
Reflected: 0 W
RF Generator Bias
13.56 MHz
Forward: 0 W
DC Bias: 0 V
MN-BIAS Matching
Wafer Ion Energy Control
ESC Power Supply
Clamp: 0 V
He: 0 Torr
GV-201
Gate Valve
TMP-201
Turbo Molecular Pump
DP-201
Dry Pump

Live Process Data

Machine StateIDLE
StepWAIT
Chamber Pressure760 Torr
Throttle ValveClosed
ICP RF Power0 W
Bias RF Power0 W
Reflected Power0 W
Chuck Temp25 Β°C
He Backside0 Torr
WaferLoaded
SYSTEM NORMAL
Recipe Remaining00:00
Recipe Progress0%
Auto FinishREADY

Sequence

Process Sequence

Full ICP-RIE Flow: Load β†’ Pump β†’ Leak β†’ Gas β†’ RF β†’ Etch β†’ Endpoint β†’ Purge β†’ Vent
Sequence Time 00:00
1 βœ“
Load Load Wafer
2 βœ“
Pump Pump Down
3 βœ“
Leak Leak Check
4 βœ“
Gas MFC Stable
5 βœ“
RF Ignition
6 βœ“
Stable Plasma Stable
7 βœ“
Etch Main Etch
8 βœ“
Endpoint Detect Layer
9 βœ“
Over Over Etch
10 βœ“
RF OFF Power Down
11 βœ“
Purge Nβ‚‚ Clean
12 βœ“
Vent Vent / Unload

Pressure Trend

Event Log